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insulated gate bipolar transistor with ultrafast soft recovery diode e g n-channel c features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175 c ?5 s short circuit soa ? square rbsoa ? 100% of the parts tested for 4x rated current (i lm ) ? positive v ce (on) temperature coefficient ? soft recovery co-pak diode ? tight parameter distribution ? lead-free, rohs compliant ? automotive qualified * benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi g c e g ate collector em itter to-247ac AUIRGP4066D1 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measure d under board mounted and still air conditions. ambient temperature (t a ) is 25 c, unless otherwise specified. v ces = 600v i c(nominal) = 75a t sc 5 s, t j(max) = 175c v ce(on) typ. = 1.70v to-247ad AUIRGP4066D1-e g c e c c e c g

base part number package type standard pack complete part number form quantity AUIRGP4066D1 to-247ac tube 25 AUIRGP4066D1 AUIRGP4066D1-e to-247ad tube 25 AUIRGP4066D1-e ordering information parameter max. units v ce s collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 140 i c @ t c = 100c continuous collector current 90 i nominal nominal current 75 i cm pulse collector current v ge = 15v 225 i lm clamped inductive load current v ge = 20v 300 a i f nom ina l diode nominal current 75 i fm diode maximum forward current 300 v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 454 w p d @ t c = 100c maximum power dissipation 227 t j operating junction and -55 to +175 t st g storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r ) ) ??? ??? 0.33 c/w r jc (diode) thermal resistance junction-to-case-(each diode) ??? ??? 0.53 r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ??? * qualification standards can be found at http://www.irf.com/

notes: v cc = 80% (v ces ), v ge = 20v, l = 100 h, r g = 50 , tested in production i lm 400a. pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at t j of approximately 90c. calculated continuous current based on maximum allowable junction temperature. package igbt current limit is 120a. package diod e current limit is120a. note that current limitations arising from heating of the device leads may occur. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces col l ect or - to- e mi tt er b r eak down v ol tage 600 ? ? v v ge = 0v, i c = 200 a v (br)ces / t j t emper atu r e coef f . of b r eak down vol tage ?0.30?v/cv ge = 0v, i c = 15ma (25c-175c) ? 1.70 2.1 i c = 75a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 2.0 ? v i c = 75a, v ge = 15v, t j = 150c ?2.1? i c = 75a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 2.1ma v ge ( t h) / tj threshold voltage temp. coefficient ? -13 ? mv/c v ce = v ge , i c = 20ma (25c - 175c) gfe forward transconductance ? 50 ? s v ce = 50v, i c = 75a, pw = 25 s i ces collector-to-emitter leakage current ? 3.0 200 av ge = 0v, v ce = 600v ?10?mav ge = 0v, v ce = 600v, t j = 175c v fm diode forward voltage drop ? 1.60 1.77 v i f = 75a ?1.54? i f = 75a, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 150 225 i c = 75a q ge gate-to-emitter charge (turn-on) ? 40 60 nc v ge = 15v q gc gate-to-collector charge (turn-on) ? 60 90 v cc = 400v e on turn-on switching loss ? 4240 5190 i c = 75a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 2170 3060 jr g = 10 100 h, t j = 25c e total total switching loss ? 6410 8250 e ner gy l os s es i n cl u de tai l & di ode r ever s e r ecover y t d(on) turn-on delay time ? 50 70 i c = 75a, v cc = 400v, v ge = 15v t r rise time ? 80 100 ns r g = 10 100 h t d(off) turn-off delay time ? 200 230 tj = 25c t f fall time ? 60 80 e on turn-on switching loss ? 6210 ? i c = 75a, v cc = 400v, v ge =15v e off turn-off switching loss ? 2815 ? jr g =10 100 h, t j = 175c e total total switching loss ? 9025 ? e ner gy l os s es i n cl u de tai l & di ode r ever s e r ecover y t d(on) turn-on delay time ? 45 ? i c = 75a, v cc = 400v, v ge =15v t r rise time ? 70 ? ns r g =10 100 h t d(off) turn-off delay time ? 240 ? t j = 175c t f fall time ? 80 ? c ies input capacitance ? 4470 ? v ge = 0v c oes output capacitance ? 350 ? v cc = 30v c res reverse transfer capacitance ? 140 ? f = 1.0mhz t j = 175c, i c = 300a rbsoa reverse bias safe operating area full square v cc = 480v, vp 600v rg = 10 , v ge = +20v to 0v scsoa short circuit safe operating area v cc = 400v, vp 600v rg = 10 1 0 0 jt j = 175c t rr diode reverse recovery time ? 240 ? ns v cc = 400v, i f = 75a i rr peak reverse recovery current ? 50 ? a v ge = 15v, rg = 10 100 h conditions 5?? s pf

fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c, t j 175c; v ge =15v fig. 4 - reverse bias soa t j = 175c; v ge =20v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 60 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 60 s 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) 1 10 100 1000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10 sec 100 sec tc = 25c tj = 175c single pulse dc 1msec 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 25 50 75 100 125 150 175 t c (c) 0 100 200 300 400 500 p t o t ( w ) 25 50 75 100 125 150 175 t c (c) 0 25 50 75 100 125 150 i c ( a )

fig. 8 - typ. diode forward characteristics tp = 60 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 175c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 60 s fig. 9 - typical v ce vs. v ge t j = -40c fig. 7 - typ. igbt output characteristics t j = 175c; tp = 60 s 0.0 1.0 2.0 3.0 4.0 v f (v) 0 50 100 150 200 250 300 i f ( a ) -40c 25c 175c 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 38a i ce = 75a i ce = 150a 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 38a i ce = 75a i ce = 150a 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 38a i ce = 75a i ce = 150a 4 6 8 1012141618 v ge, gate-to-emitter voltage (v) 0 50 100 150 200 250 300 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 175c t j = 25c

fig. 13 - typ. energy loss vs. i c t j = 175c; l = 100 h; v ce = 400v, r g = 10 ; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l = 100 h; v ce = 400v, r g = 10 ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 175c; l = 100 h; v ce = 400v, i ce = 75a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l = 100 h; v ce = 400v, i ce = 75a; v ge = 15v fig. 17 - typ. diode i rr vs. i f t j = 175c fig. 18 - typ. diode i rr vs. r g t j = 175c 0 25 50 75 100 125 150 i c (a) 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 e n e r g y ( j ) e off e on 0 255075100 rg ( ) 1000 3000 5000 7000 9000 11000 13000 15000 e n e r g y ( j ) e off e on 0 20 40 60 80 100 120 r g ( ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on 20 40 60 80 100 120 140 160 i f (a) 20 25 30 35 40 45 50 55 60 i r r ( a ) r g = 100 r g = 22 r g = 10 r g = 47 0 50 100 150 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 r g ( ) 25 30 35 40 45 50 55 i r r ( a )

fig. 19 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 75a; t j = 175c fig. 20 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 24 - typical gate charge vs. v ge i ce = 75a; l = 485 h fig. 21 - typ. diode e rr vs. i f t j = 175c fig. 22 - v ge vs. short circuit time v cc = 400v; t c = 25c 400 500 600 700 di f /dt (a/ s) 30 35 40 45 50 55 i r r ( a ) 25 75 125 175 i f (a) 500 1000 1500 2000 2500 3000 3500 e n e r g y ( j ) r g = 10 r g = 22 r g = 47 r g = 100 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 8 1012141618 v ge (v) 0 5 10 15 20 t i m e ( s ) 0 200 400 600 800 c u r r e n t ( a ) t sc i sc 0 20 40 60 80 100 120 140 160 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v 200 400 600 800 1000 di f /dt (a/ s) 2000 4000 6000 8000 10000 12000 14000 16000 18000 q r r ( c ) 22 10 100 47 38a 75a 150a

fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.012 0.000034 0.163 0.000390 0.215 0.005990 0.139 0.033585 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.00738 0.000009 0.09441 0.000179 0.13424 0.002834 0.09294 0.0182

1k vc c dut 0 l l rg 80 v dut 480v dc 4x dut 360v l rg vcc diode clamp / du t du t / driver - 5v rg vcc dut r = v cc i cm fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit c f orce 400 h g f orce dut d1 10k c sen se 0.0075 e sense e force fig.c.t.6 - bvces filter circuit

fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 25c using fig. ct.3 -100 0 100 200 300 400 500 600 700 -3036912 time (us) vce (v) -100 0 100 200 300 400 500 600 700 ice (a) vce ic e -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 -0.20 0.00 0.20 0.40 0.60 0.80 time ( s) v f (v) peak i rr t rr q rr -100 0 100 200 300 400 500 600 700 -0.4 -0.2 0 0.2 0.4 0.6 time( s) v ce (v) -20 0 20 40 60 80 100 120 140 i ce (a) 90% i ce 10% i ce eof f loss tf -100 0 100 200 300 400 500 600 700 -0.4 -0.2 0 0.2 0.4 0.6 time ( s) v ce (v) -20 0 20 40 60 80 100 120 140 i ce (a) test current 90% i ce 10% i ce tr eon loss

to-247ac package is not recommended for surface mount application.

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? qualification standards can be found at international rectifier?s web site: http//www.irf.com/ ?? highest passing voltage qualification information ? moisture sensitivity level to-247ac to-247ad charged device model class c5 (+/-1125v) ?? aec-q101-005 qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. n/a rohs compliant yes esd machine model class m4 (+/-425v) ?? aec-q101-002 human body model class h2 (+/-4000v) ?? aec-q101-001

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